A breakdown voltage model for implanted resurf p-LDMOS device on n+ buried layer
نویسندگان
چکیده
منابع مشابه
A p+/p-buffer/n-epi cmos compatible high-side RESURF LDMOS transistor for Power IC applications
Realising a higher voltage application utilising bridge topologies in CMOS Power IC CMOS technology presents integration and design issues that must be solved by careful selection of the manufacturing process architecture. In this paper, we present a solution that uses a p+/p-buffer/n-epi stack to implement a 100V RESURF N-channel LDMOS high-side compatible power transistor. The device was deve...
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A linearly graded doping drift region structure, a novel lateral voltage-sustained layer used for improvement of reduced surface field (RESURF) LDMOS transistor performance has been evaluated theoretically, numerically and experimentally in this paper for the first time. Due to the coupling effect of the two-dimensional (2D) electrical field, it is found from the theory developed here that the ...
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In order to reduce on state resistance of LDMOS transistor, it is necessary to use RESURF structure. However, conventional isolated RESURF structures cannot be used in a multi power BCD process because of the breakdown voltage dependence on epi thickness. Accordingly, we had to use non RESURF LDMOS transistor that has higher on state resistance than RESURF LDMOS transistor in a multi power BCD ...
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One key issue for high voltage CMOS structures is the proper design of the output driver devices, which are usually lateral DMOS transistors (LDMOST). We present an analysis of a LDMOST and an ALDMOST (accumulation LDMOST) with respect to ON-resistance, punch-through and avalanche breakdown.
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This paper introduces a novel silicon-on-insulator (SOI) metal–semiconductor field-effect transistor (MESFET) with an implanted N layer (INL-SOI MESFET) to improve the DC and radio frequency characteristics. The DC and radio frequency characteristics of the proposed structure are analyzed by the 2-D ATLAS simulator and compared with a conventional SOI MESFET (C-SOI MESFET). The simulated result...
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ژورنال
عنوان ژورنال: Solid-State Electronics
سال: 1994
ISSN: 0038-1101
DOI: 10.1016/0038-1101(94)90196-1